M5M44260CTP |
RFQ for M5M44260CTP |
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| Product | Manufacturers | Pack | D/C |
| M5M44260CTP | - | 2007 | - |
|
Symbol |
Parameter |
Conditions |
Rating |
Unit |
| Vcc | Supply voltage |
With respect to Vss |
-1to+7 |
V |
| VI | Input voltage |
-1to+7 |
V | |
| Vo | Output voltage |
-1to+7 |
V | |
| Io | Output current |
50 |
mA | |
| Pd | Power dissipation | Ta=25 |
1000 |
mW |
| Topr | Operating temperature |
0to70 |
||
| Tstg | Storage temperature |
-65 to +150 |
This is a family of 262144-word by 16-bit dynamic RAMs,fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is small enough for battery back-up application.
This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.
Features |
| `Standard 40pin SOJ, 44 pin TSOP (II) Single 5V±10% supply`Low stand-by power dissipation CMOS Input level 5.5mW (Max) CMOS Input level 550W (Max) *`Operating power dissipation M5M44260Cxx-5,-5S ....................688mW (Max) M5M44260Cxx-6,-6S ....................605mW (Max) M5M44260Cxx-7,-7S ....................523mW (Max)`Self refresh capability * Self refresh current ........................150A (Max)`Extended refresh capability Extended refresh current............... 150A (Max)`Fast-page mode (512-column random access), Read-modify-write,RAS-only refresh, CASbefore RAS refresh, Hidden refresh capabilities.`Early-write mode, LCAS / UCASand OE to control output buffer impedance`512 refresh cycles every 8.2ms (A0~A8)`512 refresh cycles every 128ms (A0~A8) *`Byte or word control for Read/Write operation (2CAS, 1W type)* : Applicable to self refresh version (M5M44260CJ,TP-5S,-6S,-7S : option) only |